제품안내
제품소개
ARCHE has commercialized SiC Epitaxy products through 10 years of research and development. Through ARCHE’s technical expertise and state-of-the-art Epi growth equipment,
we deliver the excitement of high-quality SiC Epitaxy to our
customers.
We are developing SiC Epitaxy wafers for high-performance power semiconductor
devices and provide epitaxy processes of 15㎛ or more for ultra-high voltage devices,
meeting
customers' performance and quality requirements.
Key Features
• 4H Single-crystal
• 150 ㎜ Wafers
• n-type
• 4˚ off-axis
| Division | Spec. ① | Spec. ② |
| Epitaxy Thickness | 6 ~ 15 ㎛ | 16~25㎛ |
| All epilayers thickness max deviation | ≤10% | ≤12% |
| All epilayers thickness uniformity (sigma/mean) | ≤5% | ≤7% |
| Epitaxy doping concentration | 5E14~7E18/㎤ | 5E14~7E18/㎤ |
| Epilayer net target doping max deviation | ≤15% | ≤18% |
| Epilayer net doping uniformity (sigma/mean) | ≤7% | ≤9% |
| Buffer layer Thickness | 1㎛ (±10%) | 1㎛ (±10%) |
| Buffer layer doping concentration | 1E18/㎤ (±20%) | 1E18/㎤ (±20%) |
| Surface Roughness(㎚, RMS, by AFM) | ≤1 | ≤1 |
| LLS Site Yield (2 ㎜ x 2 ㎜) | > 92% | > 87% |
| Scratches (cumulative) | <30 | <30 |
| Bow (㎛) | ±30 | ±34 |
| Warp (㎛) | ≤48 | ≤55 |
| TTV (㎛) | ≤10 | ≤11 |
| SBIR (㎛) | ≤2 | ≤2 |