Product
Product
ARCHE has commercialized SiC Epitaxy products through 10 years of research and development. Through ARCHE’s technical expertise and state-of-the-art Epi growth equipment, we deliver the excitement of high-quality SiC Epitaxy to our customers.
We are developing SiC Epitaxy wafers for high-performance power semiconductor devices and provide epitaxy processes of 15㎛ or more for ultra-high voltage devices, meeting customers' performance and quality requirements.
Key Features
- 4H Single-crystal
- 150 ㎜ Wafers
- n-type
- 4˚ off-axis
| Division | Specification |
|---|---|
| Epitaxy Thickness | 5 ~ 20㎛ |
| All epilayers target thickness max deviation | ≤10% |
| All epilayers thickness uniformity (sigma/mean) | ≤5% |
| Epitaxy doping concentration | 10E15~1E17/㎤ |
| Epilayer net target doping max deviation | ≤15% |
| Epilayer net doping uniformity (sigma/mean) | ≤8% |
| Buffer layer Thickness | 1㎛ (±10%) |
| Buffer layer doping concentration | 1E18/㎤ (±20%) |
| Surface Roughness (㎚ , RMS, by AFM) | ≤1 |
| LLS Site Yield (2㎜ x 2 ㎜) | > 92% |
| Scratches (cumulative) | <30 |
| Bow (㎛) | ±30 |
| Warp (㎛) | ≤40 |
| TTV (㎛) | ≤10 |
| SBIR (㎛) | ≤2 |
| Monthly & Annual Manufacturing Wafer | 1000 & 12000 |
| Total Usable Area(2mm*2mm) | ≥92% |